Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Chi Thang Nguyen, Eun-Hyoung Cho, Bonwook Gu, Sunghee Lee, Hae-Sung Kim, Jeongwoo Park, Neung-Kyung Yu, Sangwoo Shin, Bonggeun Shong, Jeong Yub Lee and Han-Bo-Ram Lee ()
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Chi Thang Nguyen: Incheon National University
Eun-Hyoung Cho: Samsung Advanced Institute of Technology
Bonwook Gu: Incheon National University
Sunghee Lee: Samsung Advanced Institute of Technology
Hae-Sung Kim: Samsung Advanced Institute of Technology
Jeongwoo Park: Hongik University
Neung-Kyung Yu: Hongik University
Sangwoo Shin: University at Buffalo
Bonggeun Shong: Hongik University
Jeong Yub Lee: Samsung Advanced Institute of Technology
Han-Bo-Ram Lee: Incheon National University

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH3)5Ti(OMe)3 is used as a molecular surface inhibitor to prevent the growth of TiO2 film in the next atomic layer deposition process. Cp(CH3)5Ti(OMe)3 adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO2 growth. This resulted in the formation of perfectly seamless TiO2 films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO2 film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.

Date: 2022
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DOI: 10.1038/s41467-022-35428-6

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