Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite

Sajid Husain (), Isaac Harris, Guanhui Gao, Xinyan Li, Peter Meisenheimer, Chuqiao Shi, Pravin Kavle, Chi Hun Choi, Tae Yeon Kim, Deokyoung Kang, Piush Behera, Didier Perrodin, Hua Guo, James M. Tour, Yimo Han, Lane W. Martin, Zhi Yao () and Ramamoorthy Ramesh ()
Additional contact information
Sajid Husain: Lawrence Berkeley National Laboratory
Isaac Harris: University of California
Guanhui Gao: Rice University
Xinyan Li: Rice University
Peter Meisenheimer: University of California
Chuqiao Shi: Rice University
Pravin Kavle: Lawrence Berkeley National Laboratory
Chi Hun Choi: Rice University
Tae Yeon Kim: University of California
Deokyoung Kang: University of California
Piush Behera: Lawrence Berkeley National Laboratory
Didier Perrodin: Lawrence Berkeley National Laboratory
Hua Guo: Rice University
James M. Tour: Rice University
Yimo Han: Rice University
Lane W. Martin: Lawrence Berkeley National Laboratory
Zhi Yao: Lawrence Berkeley National Laboratory
Ramamoorthy Ramesh: Lawrence Berkeley National Laboratory

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.

Date: 2024
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-024-44728-y Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-44728-y

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-024-44728-y

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().