Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Diogo C. Vaz (), Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young and Fèlix Casanova ()
Additional contact information
Diogo C. Vaz: CIC nanoGUNE BRTA
Chia-Ching Lin: Components Research, Intel Corp.
John J. Plombon: Components Research, Intel Corp.
Won Young Choi: CIC nanoGUNE BRTA
Inge Groen: CIC nanoGUNE BRTA
Isabel C. Arango: CIC nanoGUNE BRTA
Andrey Chuvilin: CIC nanoGUNE BRTA
Luis E. Hueso: CIC nanoGUNE BRTA
Dmitri E. Nikonov: Components Research, Intel Corp.
Hai Li: Components Research, Intel Corp.
Punyashloka Debashis: Components Research, Intel Corp.
Scott B. Clendenning: Components Research, Intel Corp.
Tanay A. Gosavi: Components Research, Intel Corp.
Yen-Lin Huang: University of California
Bhagwati Prasad: Materials Engineering Department, Indian Institute of Science
Ramamoorthy Ramesh: University of California
Aymeric Vecchiola: Université Paris-Saclay
Manuel Bibes: Université Paris-Saclay
Karim Bouzehouane: Université Paris-Saclay
Stephane Fusil: Université Paris-Saclay
Vincent Garcia: Université Paris-Saclay
Ian A. Young: Components Research, Intel Corp.
Fèlix Casanova: CIC nanoGUNE BRTA

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

Date: 2024
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DOI: 10.1038/s41467-024-45868-x

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