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Ultra-fast switching memristors based on two-dimensional materials

S. S. Teja Nibhanupudi (), Anupam Roy (), Dmitry Veksler, Matthew Coupin, Kevin C. Matthews, Matthew Disiena, Ansh, Jatin V. Singh, Ioana R. Gearba-Dolocan, Jamie Warner, Jaydeep P. Kulkarni, Gennadi Bersuker and Sanjay K. Banerjee ()
Additional contact information
S. S. Teja Nibhanupudi: The University of Texas at Austin
Anupam Roy: The University of Texas at Austin
Dmitry Veksler: HRL Laboratories
Matthew Coupin: The University of Texas at Austin
Kevin C. Matthews: The University of Texas at Austin
Matthew Disiena: The University of Texas at Austin
Ansh: The University of Texas at Austin
Jatin V. Singh: The University of Texas at Austin
Ioana R. Gearba-Dolocan: The University of Texas at Austin
Jamie Warner: The University of Texas at Austin
Jaydeep P. Kulkarni: The University of Texas at Austin
Gennadi Bersuker: M2D solutions
Sanjay K. Banerjee: The University of Texas at Austin

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the memristor switching mechanism. Cycling endurance data confirms the ultra-fast switching capability of these memristors, making them attractive for next generation computing, storage, and Radio-Frequency (RF) circuit applications.

Date: 2024
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DOI: 10.1038/s41467-024-46372-y

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