High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer

Chieh-Ming Hung, Sheng-Fu Wang, Wei-Chih Chao, Jian-Liang Li, Bo-Han Chen, Chih-Hsuan Lu, Kai-Yen Tu, Shang-Da Yang, Wen-Yi Hung, Yun Chi () and Pi-Tai Chou ()
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Chieh-Ming Hung: National Taiwan University
Sheng-Fu Wang: National Taiwan University
Wei-Chih Chao: National Taiwan University
Jian-Liang Li: National Taiwan University
Bo-Han Chen: National Tsing Hua University
Chih-Hsuan Lu: National Tsing Hua University
Kai-Yen Tu: National Taiwan University
Shang-Da Yang: National Tsing Hua University
Wen-Yi Hung: National Taiwan Ocean University
Yun Chi: City University of Hong Kong
Pi-Tai Chou: National Taiwan University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Using a transfer printing technique, we imprint a layer of a designated near-infrared fluorescent dye BTP-eC9 onto a thin layer of Pt(II) complex, both of which are capable of self-assembly. Before integration, the Pt(II) complex layer gives intense deep-red phosphorescence maximized at ~740 nm, while the BTP-eC9 layer shows fluorescence at > 900 nm. Organic light emitting diodes fabricated under the imprinted bilayer architecture harvest most of Pt(II) complex phosphorescence, which undergoes triplet-to-singlet energy transfer to the BTP-eC9 dye, resulting in high-intensity hyperfluorescence at > 900 nm. As a result, devices achieve 925 nm emission with external quantum efficiencies of 2.24% (1.94 ± 0.18%) and maximum radiance of 39.97 W sr−1 m−2. Comprehensive morphology, spectroscopy and device analyses support the mechanism of interfacial energy transfer, which also is proved successful for BTPV-eC9 dye (1022 nm), making bright and far-reaching the prospective of hyperfluorescent OLEDs in the near-infrared region.

Date: 2024
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DOI: 10.1038/s41467-024-49127-x

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