Realization of monolayer ZrTe5 topological insulators with wide band gaps

Yong-Jie Xu, Guohua Cao, Qi-Yuan Li, Cheng-Long Xue, Wei-Min Zhao, Qi-Wei Wang, Li-Guo Dou, Xuan Du, Yu-Xin Meng, Yuan-Kun Wang, Yu-Hang Gao, Zhen-Yu Jia, Wei Li, Lianlian Ji, Fang-Sen Li, Zhenyu Zhang, Ping Cui (), Dingyu Xing and Shao-Chun Li ()
Additional contact information
Yong-Jie Xu: Nanjing University
Guohua Cao: University of Science and Technology of China
Qi-Yuan Li: Nanjing University
Cheng-Long Xue: Nanjing University
Wei-Min Zhao: Nanjing University
Qi-Wei Wang: Nanjing University
Li-Guo Dou: Nanjing University
Xuan Du: Nanjing University
Yu-Xin Meng: Nanjing University
Yuan-Kun Wang: Nanjing University
Yu-Hang Gao: Nanjing University
Zhen-Yu Jia: Nanjing University
Wei Li: Chinese Academy of Sciences
Lianlian Ji: Chinese Academy of Sciences
Fang-Sen Li: Chinese Academy of Sciences
Zhenyu Zhang: University of Science and Technology of China
Ping Cui: University of Science and Technology of China
Dingyu Xing: Nanjing University
Shao-Chun Li: Nanjing University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin−orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.

Date: 2024
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DOI: 10.1038/s41467-024-49197-x

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