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Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Yan-Kai Tzeng, Feng Ke, Chunjing Jia, Yayuan Liu, Sulgiye Park, Minkyung Han, Mungo Frost, Xinxin Cai, Wendy L. Mao, Rodney C. Ewing, Yi Cui, Thomas P. Devereaux, Yu Lin () and Steven Chu ()
Additional contact information
Yan-Kai Tzeng: Stanford University
Feng Ke: SLAC National Accelerator Laboratory
Chunjing Jia: SLAC National Accelerator Laboratory
Yayuan Liu: Stanford University
Sulgiye Park: Stanford University
Minkyung Han: Stanford University
Mungo Frost: SLAC National Accelerator Laboratory
Xinxin Cai: University of Rochester
Wendy L. Mao: SLAC National Accelerator Laboratory
Rodney C. Ewing: Stanford University
Yi Cui: Stanford University
Thomas P. Devereaux: SLAC National Accelerator Laboratory
Yu Lin: SLAC National Accelerator Laboratory
Steven Chu: Stanford University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser-heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.

Date: 2024
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DOI: 10.1038/s41467-024-51523-2

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