Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

Jiaming Wang, Chen Ji, Jing Lang, Fujun Xu (), Lisheng Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge and Bo Shen ()
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Jiaming Wang: Peking University
Chen Ji: Peking University
Jing Lang: Peking University
Fujun Xu: Peking University
Lisheng Zhang: Peking University
Xiangning Kang: Peking University
Zhixin Qin: Peking University
Xuelin Yang: Peking University
Ning Tang: Peking University
Xinqiang Wang: Peking University
Weikun Ge: Peking University
Bo Shen: Peking University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.

Date: 2024
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DOI: 10.1038/s41467-024-53857-3

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