Influence of resonant plasmonic nanoparticles on optically accessing the valley degree of freedom in 2D semiconductors

Tobias Bucher (), Zlata Fedorova (), Mostafa Abasifard, Rajeshkumar Mupparapu, Matthias J. Wurdack, Emad Najafidehaghani, Ziyang Gan, Heiko Knopf, Antony George, Falk Eilenberger, Thomas Pertsch, Andrey Turchanin and Isabelle Staude
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Tobias Bucher: Friedrich Schiller University Jena
Zlata Fedorova: Friedrich Schiller University Jena
Mostafa Abasifard: Friedrich Schiller University Jena
Rajeshkumar Mupparapu: Friedrich Schiller University Jena
Matthias J. Wurdack: Friedrich Schiller University Jena
Emad Najafidehaghani: Friedrich Schiller University Jena
Ziyang Gan: Friedrich Schiller University Jena
Heiko Knopf: Friedrich Schiller University Jena
Antony George: Friedrich Schiller University Jena
Falk Eilenberger: Friedrich Schiller University Jena
Thomas Pertsch: Friedrich Schiller University Jena
Andrey Turchanin: Friedrich Schiller University Jena
Isabelle Staude: Friedrich Schiller University Jena

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract The valley degree of freedom in atomically thin transition metal dichalcogenides, coupled with valley-contrasting optical selection rules, holds great potential for future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for controlling this degree of freedom at the nanoscale. However, their impact on the circular polarization of valley-selective emission remains poorly understood. In our study, we explore a hybrid system where valley-specific emission from a molybdenum disulfide monolayer interacts with a resonant plasmonic nanosphere. Contrary to the simple intuition that a centrosymmetric nanoresonator mostly preserves the degree of circular polarization, our cryogenic experiments reveal significant depolarization of the photoluminescence scattered by the nanoparticle. This striking effect presents an ideal platform for studying the mechanisms governing light-matter interactions in such hybrid systems. Our full-wave numerical analysis provides insights into the key physical mechanisms affecting the polarization response, offering a pathway toward designing novel valleytronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-54359-y

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