Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer

Giulia Lo Gerfo Morganti (), Roberto Rosati, Guillermo D. Brinatti Vazquez, Sebin Varghese, David Saleta Reig, Ermin Malic, Niek F. Hulst () and Klaas-Jan Tielrooij ()
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Giulia Lo Gerfo Morganti: The Barcelona Institute of Science and Technology, Castelldefels
Roberto Rosati: Philipps-Universität Marburg
Guillermo D. Brinatti Vazquez: The Barcelona Institute of Science and Technology, Castelldefels
Sebin Varghese: Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC)
David Saleta Reig: Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC)
Ermin Malic: Philipps-Universität Marburg
Niek F. Hulst: The Barcelona Institute of Science and Technology, Castelldefels
Klaas-Jan Tielrooij: Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC)

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Understanding the ultrafast transport properties of charge carriers in transition metal dichalcogenides is essential for advancing technologies based on these materials. Here, we study MoSe2 crystals with thicknesses down to the monolayer, combining ultrafast spatiotemporal microscopy and quantitative microscopic modelling. Crucially, we obtain the intrinsic ultrafast transport dynamics by studying suspended crystals that do not suffer from detrimental substrate effects. In mono- and bilayer crystals, we identify four sequential transport regimes. The first two regimes involve high-energy non-thermalized and quasi-thermalized carriers that propagate rapidly with diffusivities up to 1000 cm2/s. After ~1.5 ps, a remarkable third regime occurs with apparent negative diffusion, finally followed by exciton propagation limited by trapping into defect states. Interestingly, for trilayer and thicker crystals, only the first and last regimes occur. This work underscores the role of traps and dielectric environment in electron transport, offering valuable insights for the development of (flexible) (opto)electronic applications.

Date: 2025
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DOI: 10.1038/s41467-025-60197-3

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