Reversible switching of the environment-protected quantum spin Hall insulator bismuthene at the graphene/SiC interface

Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf (), Fabian Göhler () and Philip Schädlich ()
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Niclas Tilgner: Chemnitz University of Technology
Susanne Wolff: Chemnitz University of Technology
Serguei Soubatch: Forschungszentrum Jülich
Tien-Lin Lee: Harwell Science and Innovation Campus
Andres David Peña Unigarro: Chemnitz University of Technology
Sibylle Gemming: Chemnitz University of Technology
F. Stefan Tautz: Forschungszentrum Jülich
Thomas Seyller: Chemnitz University of Technology
Christian Kumpf: Forschungszentrum Jülich
Fabian Göhler: Chemnitz University of Technology
Philip Schädlich: Chemnitz University of Technology

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Quantum spin Hall insulators have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit coupling and offer the potential for applications in spintronics through dissipationless spin transport. Here we show that a single layer of elemental Bi, formed by intercalation of an epitaxial graphene buffer layer on SiC(0001), is a promising candidate for a quantum spin Hall insulator. This layer can be reversibly switched between an electronically inactive precursor state and a bismuthene state, the latter exhibiting the predicted band structure of a true two-dimensional bismuthene layer. Switching is accomplished by hydrogenation (dehydrogenation) of the sample. A partial passivation (activation) of Si dangling bonds causes a lateral shift of Bi atoms involving a change of the adsorption site. In the bismuthene state, the Bi honeycomb layer is a prospective quantum spin Hall insulator, inherently protected by the graphene sheet above and the H-passivated substrate below.

Date: 2025
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DOI: 10.1038/s41467-025-60440-x

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