Dynamic atomic-scale electron avalanche breakdown in solid dielectrics
Jian Wang,
Zhong-Hui Shen (),
Wei Li,
Run-Lin Liu,
Yu-Lin Duan,
Yang Shen,
Han-Xing Liu () and
Ce-Wen Nan ()
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Jian Wang: Wuhan University of Technology
Zhong-Hui Shen: Wuhan University of Technology
Wei Li: Wuhan University of Technology
Run-Lin Liu: Wuhan University of Technology
Yu-Lin Duan: Wuhan University of Technology
Yang Shen: Tsinghua University
Han-Xing Liu: Wuhan University of Technology
Ce-Wen Nan: Tsinghua University
Nature Communications, 2025, vol. 16, issue 1, 1-10
Abstract:
Abstract Electron avalanche breakdown plays a pivotal role in determining the efficiency and reliability of semiconductors and insulators in micro-nanoelectronics and power systems. However, it still remains challenging to understand and control this transient non-equilibrium process. Here, we propose and demonstrate an atomic-scale electron avalanche breakdown model to investigate the dynamic behaviors of excited electrons under extremely high electric fields in various dielectrics ranging from simple oxides to perovskites. Using high-throughput calculations, we establish the relationship maps between ionization energy, bond energy, electron mean free path and breakdown strength, and then excavate their mathematical expressions. On this basis, a high-entropy strategy in BaTiO3-based dielectrics with controllable lattice distortion is well designed to regulate the electron avalanche process, which successfully achieves a ~ 250% improvement in the breakdown strength by preventing electrons from acquiring sufficient energy. The atomic-scale understanding of electron avalanche breakdown process provides more refined guidance for atom/defect engineering to break the universal rule of inverse relation between breakdown strength and permittivity in dielectrics.
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-61866-z
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DOI: 10.1038/s41467-025-61866-z
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