Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors

Seonkwon Kim, Su Hyun Kim, Hui Ung Hwang, Jeongmin Kim, Jeong Won Kim, In Cheol Kwak, Byeongjae Kang, Seungjae Lee, Sae Byeok Jo, Du Yeol Ryu, Hyunjung Kim, Jae-Min Myoung, Moon Sung Kang (), Saeroonter Oh () and Jeong Ho Cho ()
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Seonkwon Kim: Yonsei University
Su Hyun Kim: Sungkyunkwan University
Hui Ung Hwang: Korea Research Institute of Standards and Science (KRISS)
Jeongmin Kim: DGIST
Jeong Won Kim: Korea Research Institute of Standards and Science (KRISS)
In Cheol Kwak: Yonsei University
Byeongjae Kang: Sogang University
Seungjae Lee: Yonsei University
Sae Byeok Jo: Sungkyunkwan University (SKKU)
Du Yeol Ryu: Yonsei University
Hyunjung Kim: Sogang University
Jae-Min Myoung: Yonsei University
Moon Sung Kang: Sogang University
Saeroonter Oh: Sungkyunkwan University
Jeong Ho Cho: Yonsei University

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10−10 A, enabling enhancement-mode operation. We refer to these as barriered junction field-effect transistors. The combination of the gate leakage suppression and high polarizability of the perovskite layer results in a field-effect mobility of 29.4 cm2V−1s−1, subthreshold swing of 67.1 mV dec−1, and on/off current ratio exceeding 105 under ≤1 V operation. These devices maintain stable operation in ambient conditions. Furthermore, we demonstrate their applicability by constructing logic gates such as NOT, NOR and NAND. These findings highlight the potential of exploiting Sn-based perovskite oxidation to advance electronic devices.

Date: 2025
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DOI: 10.1038/s41467-025-62770-2

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