Evidence for single variant in altermagnetic RuO2(101) thin films

Cong He, Zhenchao Wen (), Jun Okabayashi (), Yoshio Miura (), Tianyi Ma, Tadakatsu Ohkubo, Takeshi Seki, Hiroaki Sukegawa and Seiji Mitani
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Cong He: National Institute for Materials Science (NIMS)
Zhenchao Wen: National Institute for Materials Science (NIMS)
Jun Okabayashi: The University of Tokyo
Yoshio Miura: National Institute for Materials Science (NIMS)
Tianyi Ma: National Institute for Materials Science (NIMS)
Tadakatsu Ohkubo: National Institute for Materials Science (NIMS)
Takeshi Seki: Tohoku University
Hiroaki Sukegawa: National Institute for Materials Science (NIMS)
Seiji Mitani: National Institute for Materials Science (NIMS)

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1 $$\bar{1}$$ 1 ¯ 02) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism. The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1 $$\bar{1}$$ 1 ¯ 02)[11 $$\bar{2}$$ 2 ¯ 0] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of altermagnetism and paves the way for exploring their potential applications.

Date: 2025
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DOI: 10.1038/s41467-025-63344-y

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