Fully chemical interface engineering for statically and dynamically stable perovskite solar cells

Luyao Li, Cheng Wang, Weicun Chu, Jaewang Park, Yiming Dai, Qiankai Ba, Kaifeng Wang, Jiaxing Gao, Zeliang Wei, Xiaoming Zhao, Xuchen Nie, Lixiong Yin (), Sang Il Seok (), Riming Nie () and Wanlin Guo
Additional contact information
Luyao Li: Nanjing University of Aeronautics and Astronautics
Cheng Wang: Nanjing University of Aeronautics and Astronautics
Weicun Chu: Nanjing University of Aeronautics and Astronautics
Jaewang Park: Ulsan National Institute of Science and Technology
Yiming Dai: Nanjing University of Aeronautics and Astronautics
Qiankai Ba: Ltd.
Kaifeng Wang: Ltd.
Jiaxing Gao: Nanjing University of Aeronautics and Astronautics
Zeliang Wei: Nanjing University of Aeronautics and Astronautics
Xiaoming Zhao: Nanjing University of Aeronautics and Astronautics
Xuchen Nie: Nanjing University of Aeronautics and Astronautics
Lixiong Yin: Shaanxi University of Science and Technology
Sang Il Seok: Ulsan National Institute of Science and Technology
Riming Nie: Nanjing University of Aeronautics and Astronautics
Wanlin Guo: Nanjing University of Aeronautics and Astronautics

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract The interfacial modifications between perovskite and charge-transport layers can arise from strong chemisorption bonds or weak physical adsorption interactions. However, modifications based on physical adsorption are susceptible to detachment, which not only disrupts the original energy level alignment and defect passivation but also introduces new charge recombination centers. Here, we report a fully chemical modification strategy in which the interfacial modifiers undergo an in situ crosslinking-like reaction, forming a localized, chemically bonded layer that seamlessly extends from the bulk of the underlying transport layer to the interface. Perovskite solar cells (PSCs) fabricated with this fully chemical modification strategy achieve a power conversion efficiency (PCE) of 25.52% (certified 25.49%) under standard conditions, representing one of the highest PCEs reported for devices fully fabricated in an ambient atmosphere. In terms of static stability, unencapsulated devices exhibit linear extrapolated T80 lifetimes of 27,000 h during dark shelf storage and 19,000 h under thermal stress at 85 °C, both of which are record-breaking values for dark shelf and thermal stability, respectively. For dynamic stability, the devices maintain a linear extrapolated T80 lifetime of 2,600 h under light-dark cycling, representing the most dynamically stable PSCs reported to date.

Date: 2025
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DOI: 10.1038/s41467-025-63588-8

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