Cryogenic in situ fabrication of reversible direct write logic circuits and devices

Yuhao Hong, Lei Wang, Ziyue Shen, Tongrui Li, Long Wei, Shilin Hu, Junhua Liu, Wen Xiao, Lin Li, Mark Huijben, Kai Chen, Yulin Gan, Guus Rijnders, Gertjan Koster () and Zhaoliang Liao ()
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Yuhao Hong: University of Science and Technology of China
Lei Wang: University of Science and Technology of China
Ziyue Shen: University of Science and Technology of China
Tongrui Li: University of Science and Technology of China
Long Wei: University of Science and Technology of China
Shilin Hu: University of Science and Technology of China
Junhua Liu: University of Science and Technology of China
Wen Xiao: University of Science and Technology of China
Lin Li: University of Science and Technology of China
Mark Huijben: University of Twente
Kai Chen: University of Science and Technology of China
Yulin Gan: University of Science and Technology of China
Guus Rijnders: University of Twente
Gertjan Koster: University of Twente
Zhaoliang Liao: University of Science and Technology of China

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Signal transmission across cryogenic and room-temperature environments remains a significant bottleneck in superconducting quantum computing and classical circuit integration. Furthermore, interactions among cryogenic devices often require room-temperature interfacing, driving substantial demand for data read/write interfaces, which in turn increases interconnect complexity and constrains scalability. In situ fabrication of cryogenic, high-performance logic circuits and devices presents a promising solution to address this “wiring bottleneck”. Here, we demonstrated interfacial two-dimensional electron gas devices with reversible interface states that can be directly modulated at operating temperatures while achieving an unprecedented ultrahigh on/off ratio. Remarkably, these devices can be patterned using a “light pencil” and erased with a pulsed electric field, enabling resist free, in situ direct writing and electrical erasure of the interface state.

Date: 2025
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DOI: 10.1038/s41467-025-63647-0

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