Electronic properties and circuit applications of networks of electrochemically exfoliated 2D nanosheets

Tian Carey (), Kevin Synnatschke, Goutam Ghosh, Luca Anzi, Eoin Caffrey, Emmet Coleman, Changpeng Lin, Anthony Dawson, Shixin Liu, Rebekah Wells, Mark McCrystall, Jan Plutnar, Iva Plutnarová, Joseph Neilson, Nicola Marzari, Laurens D. A. Siebbeles, Roman Sordan, Zdenek Sofer and Jonathan N. Coleman ()
Additional contact information
Tian Carey: Trinity College Dublin
Kevin Synnatschke: Trinity College Dublin
Goutam Ghosh: Delft University of Technology
Luca Anzi: Politecnico di Milano
Eoin Caffrey: Trinity College Dublin
Emmet Coleman: Trinity College Dublin
Changpeng Lin: École Polytechnique Fédérale de Lausanne
Anthony Dawson: Trinity College Dublin
Shixin Liu: Trinity College Dublin
Rebekah Wells: Trinity College Dublin
Mark McCrystall: Trinity College Dublin
Jan Plutnar: University of Chemistry and Technology Prague
Iva Plutnarová: University of Chemistry and Technology Prague
Joseph Neilson: Trinity College Dublin
Nicola Marzari: École Polytechnique Fédérale de Lausanne
Laurens D. A. Siebbeles: Delft University of Technology
Roman Sordan: Politecnico di Milano
Zdenek Sofer: University of Chemistry and Technology Prague
Jonathan N. Coleman: Trinity College Dublin

Nature Communications, 2025, vol. 16, issue 1, 1-13

Abstract: Abstract High aspect-ratio 2D materials are promising for solution-processed electronics, yet the factors controlling exfoliation remain unclear and relatively few solution-processed networks have been electrically characterized. Here we combine theory and experiment to show that electrochemical exfoliation of layered crystals with sufficient stiffness-anisotropy (in-plane/out-of-plane Young’s modulus ratio >1.7) yields high aspect-ratio nanosheets with intrinsic mobilities μNS = 20–75 cm²V⁻¹s⁻¹ across transition metal dichalcogenides and related alloys. Impedance spectroscopy indicates that solution-deposited networks can achieve junction-to-nanosheet resistance ratios (RJ/RNS) as low as ~3, supporting theoretical predictions that μNS/μNet = RJ/RNS + 1 and suggesting that further reductions in RJ will increase μNet toward the nanosheet limit (μNS). These networks display n-type, p-type, and ambipolar behaviour, with on/off ratios up to 10⁵ and mobilities μNet = 13 cm²V⁻¹s⁻¹. Here, we show that such high-performing 2D materials enable functional solution-processed circuits, including inverters, buffers, a 4-bit digital-to-analog converter, and a circuit capable of encoding and decoding 7-bit ASCII messages.

Date: 2025
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-64100-y Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-64100-y

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-64100-y

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().