Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond

Daniel Steckler (), Stefan Lischke, Yuji Yamamoto, Wei-Chen Wen, Anna Peczek, Johannes Beyer, Aleksandra Kroh, Oksana Fursenko, Florian Bärwolf, Steffen Marschmeyer, Philipp Kulse, Dirk Wolansky and Lars Zimmermann
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Daniel Steckler: IHP—Leibniz-Institut für innovative Mikroelektronik
Stefan Lischke: IHP—Leibniz-Institut für innovative Mikroelektronik
Yuji Yamamoto: IHP—Leibniz-Institut für innovative Mikroelektronik
Wei-Chen Wen: IHP—Leibniz-Institut für innovative Mikroelektronik
Anna Peczek: IHP—Leibniz-Institut für innovative Mikroelektronik
Johannes Beyer: IHP—Leibniz-Institut für innovative Mikroelektronik
Aleksandra Kroh: IHP—Leibniz-Institut für innovative Mikroelektronik
Oksana Fursenko: IHP—Leibniz-Institut für innovative Mikroelektronik
Florian Bärwolf: IHP—Leibniz-Institut für innovative Mikroelektronik
Steffen Marschmeyer: IHP—Leibniz-Institut für innovative Mikroelektronik
Philipp Kulse: IHP—Leibniz-Institut für innovative Mikroelektronik
Dirk Wolansky: IHP—Leibniz-Institut für innovative Mikroelektronik
Lars Zimmermann: IHP—Leibniz-Institut für innovative Mikroelektronik

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Extending electro-optic bandwidth of native silicon photonic devices well beyond 100 GHz remains a challenge. We demonstrate a scalable C-band silicon photonic platform monolithically integrating ultra-high speed germanium–silicon electro absorption modulators and fin photodiodes. We apply a delta-layer doping process to incorporate Si into Ge. Two electro-absorption modulator variants with lengths of 40 µm and 20 µm exhibit electro optic 3-dB bandwidths of 100 GHz and well beyond 110 GHz, respectively. Co-integrated GeSi-fin photodiodes achieve 3-dB bandwidths of more than 200 GHz. Involving only platform integrated absorption modulators and fin photodiodes, we demonstrate open-eyes in a large signal experiment at 140 Gbit/s. This work establishes an important milestone for next generation optical communication technology.

Date: 2025
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DOI: 10.1038/s41467-025-66566-2

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