Heat treatment in an oxygen-rich environment to suppress deep-level traps in Cu2ZnSnS4 solar cell with 11.51% certified efficiency

Tong Wu, Shuo Chen, Zhenghua Su, Zi Wang, Ping Luo, Zhuanghao Zheng, Jingting Luo, Hongli Ma, Xianghua Zhang and Guangxing Liang ()
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Tong Wu: Shenzhen University
Shuo Chen: Shenzhen University
Zhenghua Su: Shenzhen University
Zi Wang: Shenzhen University
Ping Luo: Shenzhen University
Zhuanghao Zheng: Shenzhen University
Jingting Luo: Shenzhen University
Hongli Ma: Université de Rennes
Xianghua Zhang: Université de Rennes
Guangxing Liang: Shenzhen University

Nature Energy, 2025, vol. 10, issue 5, 630-640

Abstract: Abstract Sulfide kesterite Cu2ZnSnS4 (CZTS) is a competitive photovoltaic material, especially for multijunction solar cells. However, the device power conversion efficiency has remained stagnant for years. Deep-level defects, such as sulfur vacancies (VS), cause serious non-radiative recombination of charge carriers. Here we propose a passivation strategy for VS through the heat treatment of the CdS/CZTS heterojunction in an oxygen-rich environment. In this process, VS are occupied by oxygen atoms, suppressing VS defects. In addition, the diffusion of Cd ions to the CZTS absorber layer, and the formation of positive Na–O and Sn–O complexes can passivate related defects. These effects led to a reduced charge recombination and favourable band alignment. We demonstrate a certified efficiency of 11.51% for air-solution-processed CZTS solar cells (bandgap of 1.5 eV) without any extrinsic cation alloying. The study offers insights into defect passivation and performance improvement mechanism of kesterite solar cells.

Date: 2025
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DOI: 10.1038/s41560-025-01756-2

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