Low-temperature Technology of Receiving Hf and Y Oxides

Lado Jibuti () and Amiran Bibilashvili ()
Additional contact information
Lado Jibuti: Iv.Javakhishvili Tbilisi State University
Amiran Bibilashvili: Iv.Javakhishvili Tbilisi State University

No 8208876, Proceedings of International Academic Conferences from International Institute of Social and Economic Sciences

Abstract: In this work is given low-temperature plasma anodizing and magnetron sputtering technologies of receiving Hf and Y metals oxides, metal-insulator-semiconductor structure based on received oxides and research of oxides electro-physical parameters. Traditional technology of receiving oxide layers is carried out at a high temperature (1300K). High-temperature technological processes result in diffusion of unwanted impurities, increased surface roughness, worsened adhesion and uncontrolled growth of oxide films take place. In addition to the selection of oxides, it is important to decrease their formation temperature. Low temperature (600K) technologies are plasma anodizing and magnetron sputtering technologies, stimulation of which is carried out with ultraviolet (UV) light irradiation directly during formation process of oxide layers. Using abovementioned technology formation temperature of oxide layers decreases and formation rate increases. As a result high quality oxides are received. As a base materials where used p-type Si with specific resistance of 10 Ohm×cm, (100) surface orientation and sapphire wafers with (0001) surface orientation, thickness 400µm. Using C-V method was measured inversion voltage, charge in oxide, dielectric constants and density of energy states in the oxide-semiconductor interface. Using current-voltage characteristic was measured leakage current and x-ray analysis was done.Measurement results showed that received oxides can be used as active layers in memristor.

Keywords: Oxides; plasma anodizing; magnetron sputtering (search for similar items in EconPapers)
JEL-codes: L63 (search for similar items in EconPapers)
Pages: 1 page
Date: 2018-07
References: Add references at CitEc
Citations:

Published in Proceedings of the Proceedings of the 39th International Academic Conference, Amsterdam, Jul 2018, pages 96-96

Downloads: (external link)
https://iises.net/proceedings/39th-international-a ... =82&iid=019&rid=8876 First version, 2018

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:sek:iacpro:8208876

Access Statistics for this paper

More papers in Proceedings of International Academic Conferences from International Institute of Social and Economic Sciences
Bibliographic data for series maintained by Klara Cermakova ().