Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer

A. Shokri () and A. Saffarzadeh ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2004, vol. 42, issue 2, 187-191

Abstract: The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at different temperatures show an oscillatory behavior as a function of the NM spacer thickness. Also, the amplitude of these oscillations is regularly reduced when the temperature increases. The maximum TMR value, varies approximately from 270 $\%$ in reverse bias (at T=0 K) to 25 $\%$ in forward bias (at $T\geq T_C$ ). Copyright Springer-Verlag Berlin/Heidelberg 2004

Date: 2004
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DOI: 10.1140/epjb/e2004-00371-x

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