Exchange bias studies of NiFe/FeMn/NiFe trilayer by ion beam etching

V. K. Sankaranarayanan, D. Y. Kim, S. M. Yoon, C. O. Kim and C. G. Kim ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 45, issue 2, 203-206

Abstract: Effect of low energy ion beam etching on exchange bias in NiFe/FeMn/NiFe trilayer is investigated in multilayers prepared by rf magnetron sputtering. Stepwise etching and magnetization measurement of FeMn layer in an NiFe/FeMn bilayer show increase of bias as etching proceeds and FeMn thickness decreases. The bias show a maximum around 7 nm FeMn thickness and then fall sharply below 5 nm, broadly in line with the exchange bias variation at increasing FeMn thickness but in reverse order, particularly at low FeMn thickness. Progressive etching of top NiFe layer in the NiFe/FeMn/NiFe trilayer shows an initial gradual increase in bias followed by a sharp increase below 7 nm thickness of top NiFe layer, with a maximum at 2 nm thickness for both NiFe layers and greater bias for seed NiFe layer. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2005-00055-1

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