Optimization of impurity profile for p-n-junction in heterostructures

E. L. Pankratov () and B. Spagnolo ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 46, issue 1, 15-19

Abstract: We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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Citations: View citations in EconPapers (23)

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DOI: 10.1140/epjb/e2005-00233-1

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