Electron mobility in a modulation doped AlGaN/GaN quantum well

Z. Yarar, B. Ozdemir and M. Ozdemir ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 49, issue 4, 407-414

Abstract: We consider a two dimensional electron gas confined to a modulation doped AlGaN/GaN quantum well and study the dependence of low field mobility on various parameters such as composition, well width, remote impurity and interface roughness as a function of temperature. GaN is assumed to be in the zincblende structure. Acoustic and optical phonon, ionized remote impurity and interface roughness scatterings are taken into account in mobility calculations. The scattering rates are calculated using the self-consistently calculated wave functions obtained from the numerical solution of Poisson and Schrödinger equations. Also found from the self-consistent solutions are the potential profile at the junction, the energy levels in the well and electron concentrations in each level. Ensemble Monte Carlo method is used to find the drift velocities of the two dimensional electrons along the interface under an applied field. The mobility of two dimensional electrons is obtained from the drift velocity of electrons. It is found that while remote impurity scattering is very effective for small values of spacer layer and doping concentrations, increasing Al concentration reduces the mobility of electrons. The effect of surface roughness, on the other hand, on mobility is almost independent of well width. The results of our simulations are compatible with the existing experimental data. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 72.20.Dp General theory, scattering mechanisms, 72.20.Fr Low-field transport and mobility; piezoresistance, 73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions, (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00092-2

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