Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping

R. A. Sá Ferreira, A. L. Ferreira and L. D. Carlos ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 50, issue 3, 371-378

Abstract: A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic hybrids systems giving values for the energy gap, E 0 , (1.896–3.882 eV) and for the β (4.36–12.08 eV -1 ) parameter that characterizes the experimental decay of the density of localized states within the gap consistent with those achieved by some other recombination models previously reported for a-Si:H.. The thermal relaxation within localized states model is more physically detailed incorporating radiative and non-radiative transition mechanism for carriers relaxing into localized states that are explicitly absent in the previously reported theoretical descriptions Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 78.55.Qr Amorphous materials; glasses and other disordered solids, 81.05.Gc Amorphous semiconductors, 81.07.Pr Organic-inorganic hybrid nanostructures, (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00157-2

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