Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

M. Ye (), Y. T. Cui, Y. Nishimura, Y. Yamada, S. Qiao, A. Kimura, M. Nakatake, H. Namatame and M. Taniguchi

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, vol. 75, issue 1, 31-35

Date: 2010
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DOI: 10.1140/epjb/e2010-00044-3

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