The effects of the intense laser field on bound states in Ga x In 1- x N y As 1- y N/GaAs single quantum well

F. Ungan, E. Kasapoglu (), C. A. Duque, U. Yesilgul, S. Şakiroglu and I. Sökmen

The European Physical Journal B: Condensed Matter and Complex Systems, 2011, vol. 80, issue 1, 89-93

Abstract: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga x In 1- x N y As 1- y N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011

Date: 2011
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DOI: 10.1140/epjb/e2011-10902-y

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