Noise Measurements of a Superconducting Single Electron Transistor (SSET) at T=0.3K

B. Buonomo, P. Carelli, M. G. Castellano, F. Chiarello, C. Cosmelli, R. Leoni and G. Torrioli
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B. Buonomo: Istituto Elettronica dello Stato Solido IESS-CNR
P. Carelli: Università dell’Aquila, INFM-Dipartimento di Ingegneria Elettrica
M. G. Castellano: Istituto Elettronica dello Stato Solido IESS-CNR
F. Chiarello: INFM-Dipartimento di Fisica Universita ’ “La Sapienza”
C. Cosmelli: INFM-Dipartimento di Fisica Universita ’ “La Sapienza”
R. Leoni: Istituto Elettronica dello Stato Solido IESS-CNR
G. Torrioli: Istituto Elettronica dello Stato Solido IESS-CNR

A chapter in Macroscopic Quantum Coherence and Quantum Computing, 2001, pp 173-181 from Springer

Abstract: Abstract A superconducting single electron transistor, based on aluminum electrodes, was fabricated and studied. The characterization was made by measuring both the transport properties as a function of temperature and the noise performance. As a result, we observed modulation of the transfer characteristics up to 1.4K and we measured a charge sensitivity of 3.8 10-4 e/√Hz at 10 Hz and 0.3 K.

Keywords: single electron tunneling; mesoscopic devices (search for similar items in EconPapers)
Date: 2001
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DOI: 10.1007/978-1-4615-1245-5_18

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