Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions

Masahide Kobayashi, Hiroyuki Sumitomo, Yutaka Kadoya, Masamichi Yamanishi and Masahito Ueda
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Masahide Kobayashi: Faculty of Engineering Hiroshima University, Department of Physical Electronics
Hiroyuki Sumitomo: Faculty of Engineering Hiroshima University, Department of Physical Electronics
Yutaka Kadoya: Faculty of Engineering Hiroshima University, Department of Physical Electronics
Masamichi Yamanishi: Faculty of Engineering Hiroshima University, Department of Physical Electronics
Masahito Ueda: Faculty of Engineering Hiroshima University, Department of Physical Electronics

A chapter in Quantum Communication, Computing, and Measurement, 1997, pp 503-512 from Springer

Abstract: Abstract By a new scheme for the generation of sub-Poissonian photon fluxes named quantum-confined Stark effect (QCSE) blockade, it is predicted that sub-Poissonian photons at 10-photon levels can be generated with a small size semiconductor light emitter driven even by a constant voltage source. We demonstrate how to design a semiconductor diode for the proposed scheme. As a result, it is shown that a strict adjustment of the doping concentration in the p- and n-doped widegap regions is not always required. Both stray capacitance and leakage conductance are unavoidable in such a small size device, but are pointed out not to affect the sub-Poissonian photon generation because of the constant voltage operation.

Keywords: Doping Concentration; Quantum Well; Noise Suppression; Coulomb Blockade; Noise Power Spectrum (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-1-4615-5923-8_55

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DOI: 10.1007/978-1-4615-5923-8_55

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