Simulation of Electron Transport in Semiconductor Microstructures: Field Emission from Nanotip

V. A. Fedirko, Yu. N. Karamzin and S. V. Polyakov
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V. A. Fedirko: Moscow State University of Technology “STANKIN”
S. V. Polyakov: Institute for Mathematical Modelling of RAS

A chapter in Mathematical Modeling, 2001, pp 79-89 from Springer

Abstract: Abstract Semiconductor submicron structures and nanostructures are now the basis of modern solid state electronics. Numerical simulation of their static and dynamic characteristic is an actual practical problem and adequate mathematical modeling of electron transport in these structures based on clear understanding of its fundamental physical peculiarities is vital for successful development of submicron devices.

Keywords: Electron Temperature; Impact Ionization; Electron Heating; Surface Electric Field; Submicron Device (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-1-4757-3397-6_8

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DOI: 10.1007/978-1-4757-3397-6_8

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