The Study of Pores and Free Volume in Amorphous Models

Pham Khac Hung, Vo Van Hoang, Hoang Van Hue, Le Van Vinh () and Ngyuen Van Hong
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Pham Khac Hung: Hanoi University of Technology, Institute of Engineering Physics
Vo Van Hoang: National University of HoChiMinh City, Department of Physics
Hoang Van Hue: Hanoi University of Technology, Institute of Engineering Physics
Le Van Vinh: Hanoi University of Technology, Institute of Engineering Physics
Ngyuen Van Hong: Hanoi University of Technology, Institute of Engineering Physics

A chapter in Modeling, Simulation and Optimization of Complex Processes, 2005, pp 215-223 from Springer

Abstract: Summary We presented the results of computing simulation of microspores and free volumes surrounding an atom in the amorphous model which constructed by statistic relaxation method on parallel computers. On purpose to accurately determine the amount of vacancy-like pores, several models containing from 104 to 4.105 atoms with boundary periodic condition have been constructed corresponding to the density of 85.56 atoms/nm 3 or 83.90 atoms/nm 3. The calculations showed that amorphous models have about 0.0009–0.0075 vacancy-like pores per atom depending on the atomic density and local metstable states.

Keywords: amorphous metals; multimillion computer simulation (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-540-27170-3_17

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DOI: 10.1007/3-540-27170-8_17

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