Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems

Markus Brunk () and Ansgar Jüngel ()
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Markus Brunk: Universität Mainz, Institut für Mathematik
Ansgar Jüngel: Technische Universität Wien, Institut für Analysis und Scientific Computing

A chapter in Mathematics – Key Technology for the Future, 2008, pp 29-38 from Springer

Abstract: Abstract The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.

Keywords: Laser Diode; Photo Diode; Node Potential; Energy Relaxation Time; Electric Potential Versus (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-540-77203-3_4

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DOI: 10.1007/978-3-540-77203-3_4

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