Crystalline Ge1−x Sn x Heterostructures in Lateral High-Speed Devices

Sabina Jeschke (), Olivier Pfeiffer, Joerg Schulze and Marc Wilke
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Sabina Jeschke: IMA/ZLW & IfU - RWTH Aachen University
Olivier Pfeiffer: MuLF, Berlin University of Technology
Joerg Schulze: Institut für Halbleitertechnik, University of Stuttgart
Marc Wilke: Institute of Information Technology Services (IITS), University of Stuttgart

A chapter in Automation, Communication and Cybernetics in Science and Engineering 2009/2010, 2011, pp 597-608 from Springer

Abstract: Abstract This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1−x Sn x -alloys while embedding the needed technology process flow into a virtual knowledge management environment based on a virtual nano electrical lab.

Keywords: MOSFET; CVD; Epitaxy; virtual knowledge spaces; MBE (search for similar items in EconPapers)
Date: 2011
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-16208-4_52

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DOI: 10.1007/978-3-642-16208-4_52

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