Optimal Control of Sublimation Growth of SiC Crystals

Jürgen Sprekels (), Olaf Klein, Peter Philip and Krzysztof Wilmański
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Jürgen Sprekels: Weierstrass Institute for Applied Analysis and Stochastics
Olaf Klein: Weierstrass Institute for Applied Analysis and Stochastics
Peter Philip: Weierstrass Institute for Applied Analysis and Stochastics
Krzysztof Wilmański: Weierstrass Institute for Applied Analysis and Stochastics

A chapter in Mathematics — Key Technology for the Future, 2003, pp 343-354 from Springer

Abstract: Abstract The project aims at providing numerical tools to control and optimize sublimation growth of SiC bulk single crystals via the Modified Lely Method. It is in cooperation with the experimental group of Dr. Dietmar Siche at the Institute of Crystal Growth in Berlin. In the course of the project the Modified Lely Method is mathematically modeled and numerically simulated. We present a transient model which for the gas phase consists of balance equations for mass, momentum and energy, and reaction-diffusion equations. The model for the solid components takes into account heat transfer via conduction inside the solid materials and via radiation between solid surfaces of cavities. Results of transient numerical simulations of the temperature evolution inside the growth apparatus are depicted, illustrating the paramount influence of radiation at growth temperature.

Keywords: Porous Graphite; Source Powder; Growth Apparatus; Graphite Wall; Silicon Carbide Single Crystal (search for similar items in EconPapers)
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-55753-8_28

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DOI: 10.1007/978-3-642-55753-8_28

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