Mathematical Modelling and Numerical Simulation of Semiconductor Detectors

H. Gajewski, H.-Chr. Kaiser, H. Langmach, R. Nürnberg and R. H. Richter
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H. Gajewski: Weierstraß-Institut für Angewandte Analysis und Stochastik
H.-Chr. Kaiser: Weierstraß-Institut für Angewandte Analysis und Stochastik
H. Langmach: Weierstraß-Institut für Angewandte Analysis und Stochastik
R. Nürnberg: Weierstraß-Institut für Angewandte Analysis und Stochastik
R. H. Richter: MPI Halbleiterlabor

A chapter in Mathematics — Key Technology for the Future, 2003, pp 355-364 from Springer

Abstract: Abstract We report on a system of nonlinear partial differential equations describing signal conversion and amplification in semiconductor detectors. We explain the main ideas governing the numerical treatment of this system as they are implemented in our code WIAS-TeSCA. This software package has been used by the MPI Semiconductor Laboratory for numerical simulation of innovative radiation detectors. We present some simulation results focussing on three-dimensional effects in X-ray detectors for satellite missions.

Keywords: Voronoi Cell; Semiconductor Detector; Signal Charge; Dimensional Plot; Clear Contact (search for similar items in EconPapers)
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-55753-8_29

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DOI: 10.1007/978-3-642-55753-8_29

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