Modelling and Simulation of Strained Quantum Wells in Semiconductor Lasers

Hans-Christoph Kaiser, Uwe Bandelow, Thomas Koprucki and Joachim Rehberg
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Hans-Christoph Kaiser: Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)
Uwe Bandelow: Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)
Thomas Koprucki: Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)
Joachim Rehberg: Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)

A chapter in Mathematics — Key Technology for the Future, 2003, pp 377-390 from Springer

Abstract: Abstract A model allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the Poisson equation and the bandgap renormalization via exchange-correlation potentials, resulting in generalized (matrix-valued) Schrödinger-Poisson systems. Band structure information enters via densities and the optical response function into comprehensive simulations of Multi Quantum Well lasers. These device simulations yield valuable information on device characteristics, including effects of carrier transport, waveguiding and heating and can be used for optimization.

Keywords: Carrier Density; Optical Gain; Transition Matrix Element; Spurious Solution; Strained Quantum (search for similar items in EconPapers)
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-55753-8_31

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DOI: 10.1007/978-3-642-55753-8_31

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