Modelling and Simulation of Power Devices for High-Voltage Integrated Circuits

Rolf Hünlich, Günter Albinus, Herbert Gajewski, Annegret Glitzky, Wilfried Röpke and Jürgen Knopke
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Rolf Hünlich: Weierstrass Institute for Applied Analysis and Stochastics
Günter Albinus: Weierstrass Institute for Applied Analysis and Stochastics
Herbert Gajewski: Weierstrass Institute for Applied Analysis and Stochastics
Annegret Glitzky: Weierstrass Institute for Applied Analysis and Stochastics
Wilfried Röpke: Weierstrass Institute for Applied Analysis and Stochastics
Jürgen Knopke: alpha microelectronics gmbh

A chapter in Mathematics — Key Technology for the Future, 2003, pp 401-412 from Springer

Abstract: Abstract Process and device simulators turned out to be important tools in the design of high-voltage integrated circuits and in the development of their technology. The main goal of this project was the improvement of the device simulator WIAS-TeSCA in order to simulate different power devices in high-voltage integrated circuits developed by the industrial partner. Some simulation results are presented. Furthermore, we discuss some aspects of the mathematics of relevant model equations which device and process simulations are based on.

Keywords: Energy Model; Breakdown Voltage; Power Device; Device Simulation; Drain Voltage (search for similar items in EconPapers)
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-3-642-55753-8_33

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DOI: 10.1007/978-3-642-55753-8_33

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