Dynamic Scaling of etched surface roughness of LaSrGaO4 single crystal by Atomic Force Microscopy

Yuzuru Takagi, Satoshi Tanda, Noriyuki Fujiyama and Ikuto Aoyama
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Yuzuru Takagi: Hokkaido University, Department of Applied Physics
Satoshi Tanda: Hokkaido University, Department of Applied Physics
Noriyuki Fujiyama: Hokkaido University, Department of Applied Physics
Ikuto Aoyama: Komatsu Ltd., Research Division

A chapter in Complexity and Diversity, 1997, pp 111-113 from Springer

Abstract: Abstract We have studied kinetic roughening of etched surfaces of LaSrGaO4 single-Crystals, having layered perovskite structure like a high-Tc cuprate, by using atomic force microscopy. We found that the surface roughness exhibited a power law behavior on both the length scale and the etching time, which have self-affine structures such as surfaces of growing films. From our experiments, the etched LaSrGaO4 surface can be described as a self-affine fractal with a roughness exponent α = 0.90 ± 0.06 and a growth exponent β = 0.33 ± 0.05. Our results provide the first evidence that the etching process of LaSrGaO4 surface is dominated by a lattice vacancy growth model of the molecular beam epitaxy(MBE) type.

Keywords: dynamic scaling; roughness; surface; self-affine; atomic force microscopy (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-4-431-66862-6_19

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DOI: 10.1007/978-4-431-66862-6_19

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