Bifurcation and dynamical response of current oscillations in semiconductor with NDC

Ken-ichi Oshio
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Ken-ichi Oshio: Hiroshima University, Department of Materials Science

A chapter in Complexity and Diversity, 1997, pp 120-122 from Springer

Abstract: Abstract We present a simulational study on current oscillations in semiconductors with NDC (Negative Differential Conductivity) which brings nonlinear transport properties such that electric current decreases as increasing bias voltage. An one-dimensional model of gold-doped n-Ge has been proposed, and the computations have been performed under the boundary conditions with d.c. bias. We have found bifurcation diagrams from periodic to chaotic current oscillations, and studied dynamical response of the system to investigate its controllability.

Keywords: Spatio-temporal chaos; semiconductor; bifurcation; negative differential conductivity; field-enhanced trapping (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:spr:sprchp:978-4-431-66862-6_22

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DOI: 10.1007/978-4-431-66862-6_22

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