THE DYNAMICS OF DEUTERIUM ADSORPTION ON Pt{100} AND THE ROLE OF ADSORBATE-INDUCED DEFECTS

St. J. Dixon-Warren, A.T. Pasteur and D.A. King
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St. J. Dixon-Warren: Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
A.T. Pasteur: Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
D.A. King: Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 593-596

Abstract: The dissociative initial sticking probability,s0, for deuterium on Pt{100}-hex has been measured as a function of beam kinetic energy,Ek, and substrate temperature,TS. AtTS=150 K, s was found to increase with increasingEkconsistent with direct activated adsorption; the increase is approximately linear. AtEk=0.063eV,s0is independent of substrate temperature(s0≈0.07)over the range 150 to 1000 K, also consistent with a direct adsorption process. We present evidence for an increase ofs0due to adsorbate-induced defects. These defects survive annealing to 500 K but do not survive annealing to 1030 K. We have also measured s forD2on the(1×1)bulk truncated surface, and find it to be similar to that for the hex-reconstructed phase.

Date: 1994
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DOI: 10.1142/S0218625X94000746

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