STRUCTURAL AND ELECTRICAL STABILITY OF METAL CONTACTS TO MBE GROWN CdTeLAYERS

P. Devine, G.W. Matthews, D. Sands, C.G. Scott, M. Yousaf, C.J. Blomfield, I.M. Dharmadasa and G.C. Gregory
Additional contact information
P. Devine: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
G.W. Matthews: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
D. Sands: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
C.G. Scott: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
M. Yousaf: Department of Applied Physics, University of Hull, Hull HU6 7RX, UK
C.J. Blomfield: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK
I.M. Dharmadasa: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK
G.C. Gregory: Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 669-672

Abstract: The properties of ohmic and rectifying contacts to CdTe epilayers have been studied with a view to establishing a contacting technology with sufficient reliability and stability for use in the fabrication of a variety of CdTe-based devices involving single and multilayer structures grown by MBE. In the case ofn-type CdTe layers, evaporated gold has been found to yield Schottky barriers with initial height in excess of 0.9 eV but re-examination after a period of a few weeks at room temperature (or a much shorter time at elevated temperatures) has revealed a significant decline in the barrier height. Associated changes in the electrical properties of the semiconductor layers in the vicinity of the contact interface have been explored usingC-Vdepth profiling measurements and these have been correlated with changes in the chemical structure observed by means of SIMS imaging techniques. In particular, a significant reduction in the uncompensated shallow donor density just below the metal-semiconductor interface has been found to be accompanied by an out diffusion of Te and Cd to the surface of the metal contact.

Date: 1994
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X94000904
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000904

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X94000904

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().