A QUANTUM-SPONGE MODEL FOR POROUS SILICON

S. Sawada and N. Ookubo
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S. Sawada: Department of Electrical and Electronics Engineering, Kagoshima University, 1–21–40 Korimoto, Kagoshima 890, Japan
N. Ookubo: Department of Electrical and Electronics Engineering, Kagoshima University, 1–21–40 Korimoto, Kagoshima 890, Japan;

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 1157-1161

Abstract: We propose a “quantum-sponge” model for porous silicon. This model exhibits energy-gap widening and nonexponential decay of photoluminescence describable by the stretched exponential function. These properties are in good agreement with those observed for porous silicon. We suggest that the fractal character of its wave functions is the origin of the nonexponential decay of photoluminescence.

Date: 1996
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DOI: 10.1142/S0218625X96002072

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