Formation and Chemical Selectivity of Partially Ga-Terminated Si(111) Surfaces

Masakazu Ichikawa, Ken Fujita and Yukihiro Kusumi
Additional contact information
Masakazu Ichikawa: Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
Ken Fujita: Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
Yukihiro Kusumi: Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 665-673

Abstract: Nanoscale stripes of the Si(111)-(7 × 7) structure with atomic accuracy can be formed on the$(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Ga}$-terminated Si(111) surface, by selective thermal desorption of Ga atoms from step edges, when the surface is tilted toward the$[\bar{1}\bar{1}2]$direction. The nanoscale stripes of the 7 × 7 structure can also be formed in expected areas by selective thermal desorption of Ga atoms induced by STM stimulation. A Ga-terminated area is found to be chemically less active for adsorption of oxygen, disilane and antimony molecules which selectively react in the 7 × 7 area. By using the chemical selectivity and the nanoscale 7 × 7 stripe for formation method, a stripe pattern with the antimony-adsorbed 7 × 7 areas and$(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Ga}$areas is produced as a demonstration of nanostructure formation.

Date: 1998
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X9800102X
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x9800102x

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X9800102X

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().