A Reflection High Energy Electron Diffraction–Reflectance Anisotropy Spectroscopy Study of Silicon Growth Dynamics During Gas Source Molecular Beam Epitaxy from Silanes

B. A. Joyce, J. Zhang, A. G. Taylor and A. K. Lees
Additional contact information
B. A. Joyce: Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK
J. Zhang: Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK
A. G. Taylor: Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK
A. K. Lees: Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 761-767

Abstract: Molecular beam epitaxy (MBE) provides an ideal experimental vehicle for thein situstudy of thin film growth dynamics. By using a combination of reflection high energy electron diffraction (RHEED) and reflectance anisotropy (difference) spectroscopy [RA(D)S], it is possible to separate morphological (long range order) and local electronic structure effects, which we demonstrate with the growth of silicon films from disilane(Si2H6)on Si(001)(2 × 1)+(1 × 2)reconstructed surfaces.The rate-limiting step in Si growth from both monosilane(SiH4)and disilane is the desorption of molecular hydrogen and we have found using RAS that, over a significant range of temperature and coverage, hydrogen desorption follows zeroth order kinetics as the result of a step-mediated process. Finally, we show how this influences the growth rate on substrates of differing degrees of vicinality.

Date: 1998
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X98001146
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x98001146

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X98001146

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().