ATOMIC STRUCTURE AND ENERGETICS OF VACANCIES IN A SUBLAYER OF GaAs(110)

Jae-Yel Yi (), Ja-Yong Koo, Sekyung Lee, Dong-Hyuk Shin and Jeong Sook Ha
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Jae-Yel Yi: Department of Physics, Dong-A University, 840 Hadan-Dong, Saha-Gu, Pusan 604-714, Korea
Ja-Yong Koo: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Sekyung Lee: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Dong-Hyuk Shin: Department of Physics, Dongguk University, Pil-Dong 3-26, Chung-Gu, Seoul 100-715, Korea
Jeong Sook Ha: Electronics and Telecommunications Research Institute, PO Box 106, Yusong, Taejon 305-600, Korea

Surface Review and Letters (SRL), 2000, vol. 07, issue 01n02, 55-59

Abstract: The energetics and structure of vacancies in the second layer of GaAs(110) were examined using theab initiototal energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.

Date: 2000
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DOI: 10.1142/S0218625X00000087

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