ELECTRONIC BAND STRUCTURE OF STEPPED Si(100) SURFACES

Saed A. Salman, Şenay Katircioğlu () and Şakir Erkoç
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Saed A. Salman: Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
Şenay Katircioğlu: Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
Şakir Erkoç: Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

Surface Review and Letters (SRL), 2001, vol. 08, issue 01n02, 61-66

Abstract: We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.

Date: 2001
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DOI: 10.1142/S0218625X01000835

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