STRUCTURE AND THERMAL STABILITY OF THE SULFIDE OVERLAYERS ONCH3CSNH2-PASSIVATED GaAs(100) SURFACES

F. Q. Xu, E. D. Lu, H. B. Pan, C. K. Xie, P. S. Xu and X. Y. Zhang
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F. Q. Xu: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
E. D. Lu: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
H. B. Pan: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
C. K. Xie: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
P. S. Xu: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China
X. Y. Zhang: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China

Surface Review and Letters (SRL), 2001, vol. 08, issue 01n02, 19-23

Abstract: Chemically sulfur passivation of GaAs(100) by thioacetamide (CH3CSNH2) has been studied using synchrotron radiation photoemission spectroscopy (SRPES), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The measurement of SRPES and AES showed that the top layer of native oxides over GaAs(100) was removed and the sulfides of Ga and As were formed after the passivation process. The thermal stability and surface structure have also been studied by annealing the passivated samples at different temperatures. We found that the surface sulfides could be removed gradually; as a result, a clean, ordered and thus Fermi level unpinning surface was finally achieved. The surface restructures with GaAs(100)–S(2×1) and4×1LEED patterns were observed on annealing above 260°C and at 550°C respectively.

Date: 2001
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DOI: 10.1142/S0218625X01000896

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