IN SITUPHOTOLUMINESCENCE STUDIES OF SILICON SURFACES DURING PHOTOELECTROCHEMICAL ETCHING PROCESSES

Feng-Ming Liu, Bin Ren, Jia-Wei Yan, Bing-Wei Mao and Zhong-Qun Tian ()
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Feng-Ming Liu: State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, and Department of Chemistry, Xiamen University, Xiamen 361005, China
Bin Ren: State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, and Department of Chemistry, Xiamen University, Xiamen 361005, China
Jia-Wei Yan: State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, and Department of Chemistry, Xiamen University, Xiamen 361005, China
Bing-Wei Mao: State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, and Department of Chemistry, Xiamen University, Xiamen 361005, China
Zhong-Qun Tian: State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, and Department of Chemistry, Xiamen University, Xiamen 361005, China

Surface Review and Letters (SRL), 2001, vol. 08, issue 03n04, 327-335

Abstract: The photoluminescence (PL) from silicon surfaces during photoelectrochemical etching processes was monitoredin situby using a confocal microprobe spectrometer. The etching time, laser power, polarization potential and the resistance of silicon were found to remarkably influence the formation of porous silicon (PS). For the high resistance silicon sample, the PL band intially increases in intensity and blueshifts with the progress of etching, then decreases and stops shifting. The higher the laser power is, the stronger the PL intensity and the shorter the wavelength could be. For the low resistance silicon sample, no clear shift in the wavelength could be found with the progress of etching. These results were interpreted by the quantum confinement effect together with the influence of electrochemical reaction equilibrium and the surface oxidation species on the formation of PS.

Date: 2001
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DOI: 10.1142/S0218625X01001129

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