PEEM AND SXES CHARACTERIZATION ON THE SURFACE AND INTERFACE OF THE TRANSITION-METAL/SiC SYSTEM

Joselito Labis, Akihiko Ohi, Chihiro Kamezawa, Toshinori Fujiki, Kenichi Yoshida, Masaaki Hirai, Masahiko Kusaka and Motohiro Iwami
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Joselito Labis: Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Akihiko Ohi: Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Chihiro Kamezawa: Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Toshinori Fujiki: Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Kenichi Yoshida: Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Masaaki Hirai: Research Laboratory for Surface Science, Faculty of Science, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Masahiko Kusaka: Research Laboratory for Surface Science, Faculty of Science, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan
Motohiro Iwami: Research Laboratory for Surface Science, Faculty of Science, Okayama University, 3-1-1 Tsushima Naka, Okayama 700-8530, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 313-318

Abstract: The SiL2,3and CKsoft X-ray emission spectra of the interface of the Ti(50 nm)/4H-SiC(substrate) system, thermally annealed from 800°C to 1000°C and characterized by soft X-ray emission spectroscopy (SXES), revealed the formation of a reacted region composed of silicides withTi5Si3as the majority formed species and carbides in TiC-like bonding. Also, the photoemission electron microscopy (PEEM) imaging of Ti(10 nm) film on 3C-SiC surface duringin situheat treatment showed the formation of island structures (in ring clusters) at ~ 800°C.

Date: 2002
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DOI: 10.1142/S0218625X02002300

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