PHOTOLUMINESCENCE STUDIES OF GaInArSbHIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

J. Díaz-Reyes (), E. Corona-Organiche, J. L. Herrera-Pérez, O. Zarate-Corona and J. Mendoza-Alvarez
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J. Díaz-Reyes: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
E. Corona-Organiche: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
J. L. Herrera-Pérez: CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico
O. Zarate-Corona: CIDS-BUAP, 14 sur y Av. San Claodio, Puebla, Puebla, 72570, Mexico
J. Mendoza-Alvarez: Depto. de Física, CINVESTAV-IPN, DF, 07000/Centro, Mexico

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1645-1649

Abstract: Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of3 × 1017– 2 × 1020cm-3are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets ofSb3Te2in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor,BE2, disappears.

Keywords: Ga1 - xInxAsySb1 - y; liquid phase epitaxy; doping; photoluminescence (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0218625X02004141

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